Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR

Citation:
Chow, KH, Kiefl RF, Schneider JW, Estle TL, Hitti B, Lichti RL, Schwab C, Kreitzman SR, Duvarney RC, Senba M, Sonier J, Johnston TMS, Macfarlane WA.  1994.  Muonium dynamics in doped Si above room temperature studied by longitudinal field — μSR. Hyperfine Interactions. 86:693-698.

Keywords:

silicon

Abstract:

We report longitudinal field muSR 1/T1 measurements in Si from room temperature to 850 K. The data in pure Si and Si:B (p-type) can be explained in a two-state model where muonium cycles between its positive and neutral charge states. Within this model, the average muon-electron hyperfine parameter in the neutral state is consistent with muonium at the tetrahedral interstitial site, indicating that at the highest temperatures measured, neutral muonium spends a significant amount of time away from the bond centered site, the calculated potential minimum. Although this is also true for Si:P (n-type) at high temperatures, the data in the region between 300-450 K indicates that at least one other state is involved in the dynamics.

Notes:

n/a

Website

DOI:

10.1007/bf02068965